www.littelfuse.com ?2008 littelfuse 190 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs a k g sx02xs ev series 1.5 amp sensitive scr description applications main features features new 1.5amp sensitive gate scr series offers high static dv/dt with low turn off time (tq) through small die planar construction design. all scrs junctions are glass- passivated to ensure long term reliability and parametric stability. the sx02xs ev series is speci?cally designed for gas ignition applications that require high pulse surge current capability. symbol value unit i t(rms) 1. 5 a v drm /v rrm 400 to 600 v i gt 200 a absolute maximum ratings symbol parameter value unit i t(rms) rms on-state current (full sine wave) to-92 t c = 65c 1. 5 a sot-223 t l = 95c i t(av) average on-state current to-92 t c = 65c 0.95 a sot-223 t c = 95c i tsm non repetitive surge peak on-state current (single cycle, t j initial = 25c) to-92 sot-223 f = 50 hz 12.5 a f = 60 hz 15.0 i 2 ti 2 t value for fusing t p = 10 ms f = 50 hz 0.78 a 2 s t p = 8.3 ms f = 60 hz 0.93 di/dt critical rate of rise of on-state current ig = 10ma to-92 sot-223 t j = 125c 50 a/s i gm peak gate current t p = 10 s t j = 125c 1. 0 a p g(av) average gate power dissipation t j = 125c 0.1 w t stg storage junction temperature range -40 to 150 c t j operating junction temperature range -40 to 125 schematic symbol t 3 p ) 4 d p n q m j b o u t 5 i s v i p m f b o e t v s g b d f mount packages t 4 v s h f capability > 15amps t # m p d l j o h w p m u b h f (v drm / v rrm ) capability up to 600v t ) j h i e w e u o p j t f j n n v o j u z t * n q s p w f e u v s o p g g time (tq) < 35 sec. t 4 f o t j u j w f h b u f g p s e j s f d u microprocessor interface
191 www.littelfuse.com ?2008 littelfuse power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs electrical characteristics (t j = 25c, unless otherwise speci?ed) static characteristics (t j = 25c, unless otherwise speci?ed) symbol description test conditions sx02xs unit min max i gt dc gate trigger current v d = 12v r l = 60 15 200 a v gt dc gate trigger voltage 0.8 v v grm peak reverse gate voltage i rg = 10a 5 v i h holding current r gk = 1 k 5 ma (dv/dt)s critical rate-of-rise of off-state voltage t j = 125c v d = v drm / v rrm exponential waveform r gk = 1 k 25 v/s t q turn-off time t j = 125c @ 600 v r gk = 1 k 35s t gt turn-on time i g = 10ma pw = 15sec i t = 3.0a (pk) 3s symbol description test conditions value unit min max v tm peak on-state voltage i tm = 3.0a (pk) 1.70 v i drm off-state current, peak repetitive t j = 25c @ v d = v drm r gk = 1 k 5a t j = 125c @ v d = v drm r gk = 1 k 500a thermal resistances symbol description test conditions value unit r th(j-c) junction to case (ac) i t = 1.5a (rms) 1 to-92 50 c/w sot-223 25 r th(j-a) junction to ambient i t = 1.5a (rms) 1 to-92 160 c/w sot-223 60 1 60hz ac resistive load condition, 100% conduction.
www.littelfuse.com ?2008 littelfuse 192 power thyristor databook teccor ? brand thyristors silicon controlled recti?ers sx02xs ev series 1.5 amp sensitive scrs figure 2: normalized dc holding current vs. junction temperature
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